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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220C package High DC current gain DARLINGTON Complement to type BDX54/A/B/C APPLICATIONS Power linear and switching applications Hammer drivers,audio amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDX53/A/B/C Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER CONDITIONS BDX53 BDX53A BDX53B VCBO Collector-base voltage VCEO HAN INC Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse Base current SEM GE BDX53C BDX53 BDX53A Open base BDX53B BDX53C Open emitter ICON DUC VALUE 45 60 80 TOR UNIT V 100 45 60 V 80 100 VEBO IC ICM IB PC Tj Tstg Open collector 5 8 12 0.2 V A A A W ae ae Collector power dissipation Junction temperature Storage temperature TC=25ae 60 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 2.08 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BDX53 BDX53A IC=0.1A, IB=0 BDX53B BDX53C VCEsat VBE sat Collector-emitter saturation voltage Base-emitter saturation voltage BDX53 BDX53A ICBO Collector cut-off current BDX53B IC=3A ,IB=12mA IC=3A ,IB=12mA VCB=45V, IE=0 VCB=60V, IE=0 80 100 CONDITIONS MIN 45 60 BDX53/A/B/C SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 2.0 2.5 V V 0.2 VCB=80V, IE=0 VCB=100V, IE=0 VCE=22V, IB=0 VCE=30V, IB=0 VCE=40V, IB=0 mA ICEO IEBO hFE VF-1 VF-2 BDX53C BDX53 BDX53A BDX53B Collector cut-off current Emitter cut-off current DC current gain IN ANG CH BDX53C SEM E VEB=5V; IC=0 IF=3A IF=8A OND IC TOR UC 0.5 mA 2.0 mA VCE=50V, IB=0 IC=3A ; VCE=3V 750 1.8 2.5 2.5 V V Forward diode voltage Forward diode voltage 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDX53/A/B/C SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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